Model Number NT01N930E-128G-E4X NT01N930E-256G-E4X NT01N930E-512G-E4X NT01N930E-001T-E4X
Interface PCIe Gen3 *4, NVMe 1.3 PCIe Gen3 *4, NVMe 1.3 PCIe Gen3 *4, NVMe 1.3 PCIe Gen3*4, NVMe 1.3
Form Factor M.2 2280 M.2 2280 M.2 2280 M.2 2280
Performance
Max. Sequential Read (MB/s)Â 970Â 2040Â 2080Â 2130
Max. Sequential Write (MB/s)Â 650Â 1270Â 1700Â 1720
Max. Random Read (IOPS)Â 100KÂ 150KÂ 200KÂ 250K
Max. Random Write (IOPS)Â 130KÂ 180KÂ 200KÂ 220K
Total Bytes Written (TBW)Â 75Â 150Â 300Â 600
Environmental
Storage Temperature -40°C~85°C -40°C~85°C -40°C~85°C -40°C~85°C
Operation Temperature 0°C~70°C 0°C~70°C 0°C~70°C 0°C~70°C
Shock Resistance 1500g/0.5ms 1500g/0.5ms 1500g/0.5ms 1500g/0.5ms
MTBF 2 million hours 2 million hours 2 million hours 2 million hours
Limited Warranty (Years)Â 3Â 3Â 3Â 3
Physical
Length 80mm 80mm 80mm 80mm
Width 22mm 22mm 22mm 22mm
Height 2.25mm 2.25mm 2.25mm 2.25mm
Weight <8g <8g <8g <8g
Special Noted:
1. Performance measured using CrystalDiskMark 8.0.0 x64.
2. Write cache enabled.
3. 3 years or Max Endurance(TBW) limit, whichever occurs first.
4. 1MB/sec = 1,048,576 bytes/sec was used in sequential performance.
5. 1GB means 1,000,000,000 bytes, actual available capacity less.
6. According to internal test, transmission rate may vary depending on host hardware, software and usage.
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